s4111/s4114 series s4111/s4114 series are si photodiode linear array mounted in ceramic dips (dual inline packages). these photodiode arrays are p rimarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from uv to near infrared lig ht. since all elements can be used with a reverse bias for charge storage readout, s4111/s4114 series are able to detect low level light with high sensitivity. cross-talk between elements is minimized to maintain signal purity. special filters can be attached as the input window. photodiode si photodiode array 16, 35, 46 element si photodiode array for uv to nir features l large active area l low cross-talk l wide spectral response range l high uv sensitivity l wide linearity l s4111 series: enhanced infrared sensitivity, low dark current l s4114 series: low terminal capacitance, high-speed response applications l multichannel spectrophotometers l color analyzers l light spectrum analyzers l light position detection general ratings / absolute maximum ratings absolute maximum ratings active area (per 1 element) package size effective area between elements measure between elements pitch reverse voltage v r max. operating temperature topr storage temperature tstg type no. dimensional outline/ window material * (mm) (mm) (mm 2 ) (mm) (mm) number of elements (v) (c) (c) s4111-16q ? /q s4111-16r ? /r 18 pin dip 1.45 0.9 1.305 16 s4111-35q ? /q 40 pin dip 35 S4111-46Q ? /q 48 pin dip 46 s4114-35q ? /q 40 pin dip 35 s4114-46q ? /q 48 pin dip 4.4 0.9 3.96 0.1 1.0 46 15 -20 to +60 -20 to +80 electrical and optical characteristics (typ. ta=25 c, per 1 element, unless otherwise noted) photo sensitivity s spectral response range peak sensitivity wavelength p p 200 nm 633 nm dark current i d max. shunt resistance rsh v r =10 mv terminal capacitance ct rise time tr r l =1 k ? =655 nm nep = p type no. (nm) (nm) (a/w) (a/w) (a/w) v r =10 mv (pa) v r =10 v (pa) min (g ? ) typ. (g ? ) v r =0 v (pf) v r =10 v (pf) v r =0 v (s) v r =10 v (s) v r =0 v (w/hz 1/2 ) v r =10 v (w/hz 1/2 ) s4111-16q 190 to 1100 0.08 0.43 s4111-16r 320 to 1100 -0.39 5 25 2.0 250 200 50 0.5 0.1 4.4 10 -16 1.7 10 -15 s4111-35q S4111-46Q 190 to 1100 960 0.58 10 50 1.0 30 550 120 1.2 0.3 1.3 10 -15 3.1 10 -15 s4114-35q s4114-46q 190 to 1000 800 0.50 0.08 0.43 60 300 0.15 2 35 20 0.1 0.05 5.7 10 -15 8.0 10 -15 * window material r: resin coating, q: quartz glass 1
si photodiode array s4111/s4114 series dark current vs. reverse voltage 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 190 400 600 800 1000 1200 wavelength (nm) photo sensitivity (a/w) (typ. ta=25 ?c) s4114 series s4111-16q/-35q/-46q s4111-16r spectral response kmpdb0112ea +1.4 +1.2 +1.0 +0.8 +0.6 +0.4 +0.2 -0.2 0 190 1100 wavelength (nm) 800 1000 600 400 temperature coefficient (%/ ? c) (typ. ) s4111 series s4114 series kmpdb0113ea 1 10 relative sensitivity (%) light position on active area (500 m m/div.) (ta=25 ? c, l =655 mm, v r =0 v) 0.1 100 kmpdb0015ea 100 10 1 0.1 relative sensitivity (%) light position on active area (500 m m/div.) (ta=25 ? c, l =655 mm, v r =0 v) kmpdb018eb 0.01 0.1 1 10 100 100 fa 10 fa 1 pa 10 pa 100 pa reverse voltage (v) dark current s4114-35q/-46q s4111-35q/-46q s4111-16q/-16r (typ. ta=25 ? c) kmpdb0114ea 0.1 1 10 100 10 pf 100 pf 1 nf reverse voltage (v) terminal capacitance s4111-16q/-16r s4114-35q/-46q s4111-35q/-46q (typ. ta=25 ? c) kmpdb0115ea example of cross-talk s4114 series s4111 series terminal capacitance vs. reverse voltage photo sensitivity temperature characteristics 2
si photodiode array s4111/s4114 series dimensional outlines (unit: mm) p 2.54 8 = 20.32 22.86 0.3 18.8 22.0 2.2 0.3 0.5 2.54 (4.5) index mark 7.87 0.3 7.49 0.2 1234567 0.46 7.62 0.3 0.5 0.2 6.5 photosensitive surface 9 8 18 17 16 15 14 13 12 10 11 0.25 active area 15.9 quartz glass ch 1 ch 16 1.45 0.9 0.3 S4111-46Q 1.65 a type no. s4114-46q 1.55 3.0 0.3 p 2.54 23 = 58.42 2.54 0.46 ch 1 4.4 active area 45.9 65.0 0.8 15.11 0.25 ch 46 (4.5) 15.5 0.3 25 26 47 2 1 24 23 48 pin no. 15.24 0.25* a 0.25 photosensitive surface kmpda0135ea p 2.54 8 = 20.32 22.86 0.3 18.8 active area 15.9 2.2 0.3 2.54 (4.5) index mark 1.45 7.87 0.3 7.49 0.2 123456789 18 17 16 15 14 13 12 11 10 0.46 7.62 0.3 0.5 0.2 photosensitive surface 0.25 ch 1 ch 16 0.9 0.3 kmpda0136ea kmpda0021ec kmpda0019ec s4111-35q 1.45 a type no. s4114-35q 1.35 p 2.54 19 = 48.26 ch 1 4.4 active area 34.9 50.8 0.6 15.5 0.3 21 22 39 2 1 20 19 2.8 0.3 2.54 0.46 ch 35 40 (4.5) 15.11 0.25 pin no. 15.24 0.25* a 0.25 photosensitive surface details of elements (for all types) a b c c s4111-16q/16r 1.45 0.9 0.1 abc 4.4 0.9 0.1 s4111-35q/46q s4114-35q/46q kmpda0112ea ? S4111-46Q, s4114-46q ? s4111-35q, s4114-35q ? s4111-16q ? s4111-16r 3
si photodiode array s4111/s4114 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2006 hamamatsu photonics k.k. cat. no. kmpd1002e06 aug. 2006 dn )% 32 ( ;72 ( 132 ( f0f0f0 . . . . ;1 1 1 1 3 3 3 75 5 5 3 9 9 9 c. . . 5 1 1 1 :3 3 3 9 f0 5 5 7 )0 .9 . ; .9 .. ; .. .1 1 : .1 .3 7 c .3 .5 3 7 .5 ;9 c ; ;9 ;. 5 ;. ;1 : ;1 ;3 .9 )0 ;5 . f0 19 .. ;7 1. .; ;; 11 .1 ; 13 .7 .: f0 .3 .c 17 .c .7 1; .5 .; 1 .: . ;: ;9 : ;c ; c ;7 ;. 7 ;; ;; ; ; ;1 .: ;7 : .c ;3 c .7 ;c 7 .; ;5 ; . ;: : 19 )0 c 1 7 1. ; 1; 11 : 17 c 13 7 1c ; 15 operating circuits in the most generally used circuit, operational amplifiers are con- nected to each channel to read the output in real time. the output of an operational amplifier is of low impedance and thus can be easily multiplexed. in the charge storage readout method, the charge stored in the junction capacitance of each channel, which is proportional to the incident light intensity, can be read out in sequence by a multiplexer. with this method, reverse voltage must be applied to the photodiodes, so s4111 and s4114 series are suitable. one amplifier is sufficient but care should be taken regarding noise, dynamic range, etc. photodiode array address multiplexer bias f$*0999.
photodiode array multiplexer f$*0999
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